薄膜淀积过程中的电荷转移

Charge Transfer during Film Deposition

本文介绍了一种用满足一定条件的俄歇谱线的峰－峰幅度值来研究局域电子态密度的方法。并用此方法研究了成膜原子与衬底原子间的电荷交换行为。结果表明当Ｃｕ（Ｎｉ）淀积到衬底Ｎｉ（Ｃｕ）的初期阶段，Ｎｉ的部分价带电子转移到Ｃｕ中。同样结果也发生在Ｃｕ淀积到Ｍｏ衬底上的情况。本研究表明，薄膜的一些宏观性质（如膜层和衬底的粘附）可以和微观的现象相联系。

The charge transfer during the film deposition has been investigated by the method of measuring the intensity of Auger transition.Since the Auger intensity is proportional to the electron density of the states of the levels involved in transition,under some circumstances the changes of Auger intensity directly reflect the charge transfer between deposited film and substrate. It has been found that the valence electrons of Ni transfer partially to the Cu when the Cu (or Ni) is deposited onto Ni(or Cu) at very early stage of the deposition.Similar phenomenon is also found in the case of Cu deposition onto Mo.This results may reveal the relationship between the microscopic phenomenon(electron transfer) and the macroscopical property of materials such as the adhesion between the film and substrate.