摘要
本文介绍由日本真空技术株式会社开发的新型ITO膜溅射阴极——α阴极,同以往相比它具有诸如高靶材利用率、低溅射电压、高功率——高速率以及无需靶的清洗等优点。
In this paper it is introduced the newly developed ITO sputtering cathode α cathode by ULVAC.The α cathode with it's merits, for example high target utilization,low sp. voltage, high power high rate and no target cleaning etc.is now actively used in SDP series sputtering system for ITO deposition.
出处
《真空》
CAS
北大核心
1996年第4期33-39,共7页
Vacuum