摘要
在大气压下,利用工作在16kHz的介质阻挡放电(DBD)等离子枪,以氩气为工作气体,分别用四甲基硅氧烷(TEOS)、六甲基硅氧烷(HMDSO)和八甲基环四硅氧烷(D4)为单体,通过改变载气流量、等离子体放电功率等研究聚合S iOx薄膜的结构性能影响。采用红外光谱(FTIR)分析所沉积S iOx薄膜的结构,通过接触角测试了解其表面亲/疏水性能。
At atmospheric pressure, SiO, films were deposited by using DBD plasma gun in different precursors (TEOS, HMDSO, and D4) with Ar as carrier gas in 16 kHz high voltage power. The effects of plasma power and flow rate of carrier gas on the film properties were investigated. The structure of deposited films was characterized with Fourier transform infrared ( FTIR), and the contact angle measurement was taken to reveal the film hydrophilic or hydrophobic features.
出处
《包装工程》
CAS
CSCD
北大核心
2006年第4期56-58,共3页
Packaging Engineering
基金
北京市教委项目
北京印刷学院引进人才基金的资助