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单体对大气下沉积SiO_(x)薄膜的性能研究 被引量:1

Investigation of SiO_x Films Synthesized with Different Precursors at Atmospheric Pressure
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摘要 在大气压下,利用工作在16kHz的介质阻挡放电(DBD)等离子枪,以氩气为工作气体,分别用四甲基硅氧烷(TEOS)、六甲基硅氧烷(HMDSO)和八甲基环四硅氧烷(D4)为单体,通过改变载气流量、等离子体放电功率等研究聚合S iOx薄膜的结构性能影响。采用红外光谱(FTIR)分析所沉积S iOx薄膜的结构,通过接触角测试了解其表面亲/疏水性能。 At atmospheric pressure, SiO, films were deposited by using DBD plasma gun in different precursors (TEOS, HMDSO, and D4) with Ar as carrier gas in 16 kHz high voltage power. The effects of plasma power and flow rate of carrier gas on the film properties were investigated. The structure of deposited films was characterized with Fourier transform infrared ( FTIR), and the contact angle measurement was taken to reveal the film hydrophilic or hydrophobic features.
出处 《包装工程》 CAS CSCD 北大核心 2006年第4期56-58,共3页 Packaging Engineering
基金 北京市教委项目 北京印刷学院引进人才基金的资助
关键词 大气压DBD SIOX 单体 atmospheric pressure DBD SiOx precursors
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参考文献11

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  • 1Deilmann M, Theib S, Awakowicz P. Pulsed microwave plasma polymerization of silicon oxide films: application of efficient permeation barriers on polyethylene terephthalate [J]. Surface ~ Coatings Technology, 2008, 202 (10) : 1911-7.
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  • 6Gruniger A, Biede A, Sonnenfeld A, et al. Influence offilm structure and composition on diffusion barrier per- formance of SiO~ thin films deposited by PECVD [J]. Sur- face g~ Coatings Technology, 2006, 200(14/15) : 4564-71.
  • 7Jin S B, Lee S J, Choi Y S, et al. High-rate deposition and mechanical properties of SiO~ film at low temperature by plasma enhanced chemical vapor deposition with dual frequencies ultra high frequency and high frequency [J]. Thin Solid Films, 2011, 519(19): 6334-8.
  • 8Lee G H, Yun J H, Lee S H. Investigation of brittle fail- ure in transparent conductive oxide and permeation barrier oxide multilayers on flexible polymers [J]. Thin Solid Films, 2010, 518(11)~ 3075-80.
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  • 10Bouchet J, Rochat G, Leterrier Y, et al. The role of the a- mino-organosilane/SiOx interphase in the barrier and me- chanical performance of nanocomposites [J]. Surface Coatings Technology, 2006, 200(14/15).- 4305-11.

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