HL－1M装置杂质VUV辐射及Te观测

IMPURITY VUV RADIATION AND T eMEASUREMENTS ON THE HL 1M DEVICE

本文介绍了ＨＬ－１Ｍ装置等离子体杂质真空紫外辐射观测的初步结果。用类Ｌｉ离子谱线强度比法估计出Ｔｅ≈４００ｅＶ。镀膜后的ＣＥＭ探测器的灵敏度提高。

The results of impurity VUV radiation observation on the HL 1M device are given in this paper. The electron temperature T e, estimated with the intensity ratio of Li like ion lines,is about 400eV. The sensitivity of detector of detector is increased with a film coated on it. It is shown that impurities have an important influence on the HL 1M device discharge.