摘要
为了解决电子系统塑料机盒的抗EM I问题,提出了一种采用多靶磁控溅射技术对塑料内表面进行金属化的新环保工艺,利用屏蔽效能对电磁兼容性作了理论分析,并对金属化层的膜系结构、溅射工艺、附着强度等作了较为深入的研究。研究结果表明:衰减损耗是各层屏蔽效果线性相加的结果;反射损耗与各层相对位置关系无关;层数多或各屏蔽层的反射越大,则屏蔽效果越好。试验表明:采用Cu/1Cr18N i9Ti的金属屏蔽层结构,可以获得良好的屏蔽效能及耐候性,其中500nm Cu+100nm 1Cr18N i9Ti较宜。
Aimed at the clean solution of anti-EMI technology of plastic shell of electronic equipment, a method is presented, which is named as magnetic sputtering. The shielding efficiency and its shielding mechanism of different metals and its different structures are studied by electric and magnetic theory expressions. The technology parameter of sputtering is also studied. The result shows that the shielding metal films loss is the linear plus results of each film. The reflection is independent of position of each shielding film. The more layers or reflection between films, the more shielding efficiency can be obtained. The experiment results show that the optimal structure of shielding films is 500nm Cu ＋ 100nm 1Cr18Ni9Ti .
出处
《表面技术》
EI
CAS
CSCD
2006年第4期75-76,81,共3页
Surface Technology
关键词
电磁屏蔽
塑料
磁控溅射
屏蔽效能
Anti-EMI
Plastic
Magnetic sputtering
Shielding efficiency
