GeⅢ实激发组态4p5p及偶宇称高激发态能级的理论计算

EXTENDED ANALYSIS OF HIGH EXCITED ENERGY LEVEL STRUCTURES FOR EVEN-PARITY OF GeⅢ

利用多通道量子数损理论（ＭＱＤＴ）对二价锗离子ＧｅⅢ偶宇称１１个Ｒｙｄｂｅｒｇ序列的高激发能级进行了计算和分析，预言了各序列ｎ＜５０的高激发态能级的位置，讨论了实激态对主序列的干扰，首次预言了实激发组态４ｐ５ｐ各谱项的位置。

In this paper we have calculated and analysied the even-parity energy spetra of five MQDT modes of GeⅢ by means of multichannel quantum-defect theroy(MQDT). The eleven Redybeg energy levels (n<50) and levels of 4p5p 3P j j=0、1、2、 1 D 2、 1 S 0 were pridicted.