PECVD介质膜性能研究

STUDY ON PROPERTIES OF DIELECTRIC FILM GROWN BY PECVD

本文讨论了等离子体化学气相沉积（ＰＥＣＶＤ）方法生长的氮化硅薄膜的电学性能随生长条件的变化关系，得到了性能良好的氮化硅薄膜．结果表明这种介质膜达到了薄膜电致发光器件所要求的各个性能指标，是一种具有重要应用价值的介质薄膜材料．

This paper discussed the dependence of the electrical properties of SiNx film grown by PECVD upon the growth conditions. This film overcame stress peeling and catastrophic failures problems in sputtered SiN. film. It is experimently indicated that this dielectric film is satisfied to application on TFEL panels.