四元合金Ga_xIn_（1－x）As_（1－y）Sb_y的禁带宽度与组分关系的计

METHODS OF CALCULATION OF THE COMPOSITIONAL DEPENDENCE OF THE ENERGY BANDGAP FOR QUATERNARY ALLOYS Ga_xIn_(1-x)As_(1-y)Sb_y

四元合金Ｇａ＿ｘＩｎ＿（１－ｘ）Ａｓ＿（１－ｙ）Ｓｂ＿ｙ的禁带宽度与组分关系的计算与讨论田园，张宝林，金亿鑫，周天明，李树纬，宁永强，蒋红，元光（中国科学院长春物理研究所，长春１３００２１）ＧａｌｎＡｓＳｂ是直接带隙、窄禁带的半导体材料，其波长范围为...

The methods for calculating the compositional dependence of the energy bandgap for quaternary alloys GaxIn1-xAs1-ySby are discussed in this paper. The linear interpolation method by Moon et al. was applied to calculate the compositional dependence of the energy bandgap for Ⅲ-Ⅴ quaternary alloys. In addition, littejohn gave another method, which was partly different from that reported by Moon et al. According to the two method, we calculated the energy bandgap as a function of the compositions for quaternary alloys GaxIn1-xAs1-ySby. Comparing the calculated values with the experimental ones, we found that the linear interpolation method is better to calculate the energy bnadgap of GaxIn1-xAs1-ySby quaternary alloys.