热灯丝CVD金刚石膜硼掺杂效应研究

STUDY OF BORON DOPED DIAMOND FILMS BY HOT FILAMENT CVD

利用Ｒａｍａｎ谱和Ｘ射线衍射微分析研究了金刚石膜硼掺杂效应．研究发现，在硼浓度较低时，金刚石膜中非晶碳（Ｓｐ２键合）含量减少，而随着硼浓度增加，金刚石膜的Ｒａｍａｎ特征峰（Ｓｐ３）向低频方向漂移，并且展宽和出现不对称．

The properties of boron doped diamond films prepared by hot filament CVD were studied with Raman spectra and X ray microanalysis. It was found that the content of the graphitic type (Sp 2) bonding in the CVD diamond was reduced at low boron concentrations, and the widening and shift of the characteristic diamond Sp 3 Raman peak appeared in the diamond with increasing boron concentrations. This can be interpreted in terms of the lattice strain and Fano interaction caused by boron doping.