DCPJ法多次沉积制备金刚石厚膜的研究

Study of the Diamond Thick Film Prepared by Several Times of Deposition with DCPJ Method

用直流电弧等离子体喷射（ＤＣＰＪ）法进行多次沉积，在硅衬底上制备了金刚石厚膜。并用扫描电镜对这种厚膜的截面结构和表面状态进行分析，发现截面有明显的层状结构，在原来晶面上进行二次沉积是一个重新的成核过程。并对多次沉积过程中金刚石晶粒的生长特性进行了描述。

After several times of deposition on a Si substrate with the method of DCPJ, a thick dismond film was produced. The cross section and surface state of this film were studied with SEM. We found that there was a layer structure in the cross section, and re-nucleation occurred when the second deposition was done on the original film. The growth pattern of diamond in the process was also studied.