量子阱半导体光放大器的增益偏振相关性研究

Study on gain polarization sensitivity of quantum-well semiconductor optical amplifier

应用能带计算理论,研究了张应变量大小、量子阱厚度对量子阱半导体光放大器(SOA)中的增益偏振相关性的影响。采用张应变量子阱为有源区,设计了增益偏振无关的1.55μm的SOA,它可以在较宽的载流子浓度范围、较宽的光波长范围内满足增益对偏振的不灵敏要求。另外,还采用混合应变量子阱为有源区,设计了增益偏振无关的1.31μm的SOA。

Based on energyband engineering theory, the influences of tensile strain and quantum-well width on the gain polarization dependence of quantum-well Semiconductor Optical Amplifiers （SOA） are investigated. A 1.55μm gain polarization-insensitive SOA with tensile strained quantum-well as the active region is designed, which has very low polarization sensitivity in a wide range of carrier density and optical wavelengths. Also designed is a 1.31μm gain polarization-insensitive SOA with mixed tensile and compressively strained wells as the active region.