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CMOS器件总剂量辐射响应理论模拟

Theoretic Simulation for CMOS Device on Total Dose Radiation Response
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摘要 利用线性响应理论模型模拟C4007B、CC4007RH和CC4011器件受不同γ射线剂量率辐射时的总剂量效应。研究结果表明,辐射响应与吸收剂量成线性关系时,在实验室选用任一特定剂量率进行总剂量辐射和辐照后室温退火,可以通过线性响应理论模拟其它剂量率辐射下的总剂量效应。理论模拟结果与实际不同剂量率辐射实验结果符合得很好。 Total dose effect is simulated for C4007B, CC4007RH and CC4011 devices at different absorbed dose rate by using linear system theory. When irradiation response and dose are linear, total dose radiation and post-irradiation annealing at room temperature are determined for one random by choosing absorbed dose rate, and total dose effect at other absorbed dose rate can be predicted by using linear system theory. The simulating results agree with the experimental results at different absorbed dose rate.
出处 《原子能科学技术》 EI CAS CSCD 北大核心 2006年第4期486-489,共4页 Atomic Energy Science and Technology
关键词 辐射响应 退火 剂量率 irradiation response anneal absorbed dose rate
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