部分耗尽环栅CMOS/SOI总剂量辐射效应研究

Total dose radiation effect on partially-depleted CMOS/SOI with enclose-gate structure

采用硅离子注入工艺对注氧隔离(SIMOX)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅CMOS/SOI反相器,并对其进行60Coγ射线总剂量辐照试验。结果表明,受到同样总剂量辐射后,改性材料制作的反相器与标准SIMOX材料制作的反相器相比,转换电压漂移小的多,亚阈漏电也得到明显改善,具有较高的抗总剂量辐射水平。

Silicon ion implantion was used to improve SIMOX substrate. Partially -depleped CMOS/SOI inverters with enclose -gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate. The results of ^60Coγ -ray test demonstrate that compared to standard CMOS/SOI inverters, the improved CMOS/SOI inverters have less switching voltage shifts and smaller leakage same total dose irradiation, which shows that the improved CMOS/SOI inverters have hardness.