摘要
浸没式光刻技术是将某种液体充满投影物镜最后一个透镜的下表面与硅片之间来增加系统的数值孔径,可以将193nm光刻延伸到45nm节点以下。阐述了浸没式光刻技术的原理,讨论了液体浸没带来的问题,最后介绍了浸没式光刻机的研发进展。
Immersion lithography uses some kind of fluid filling the space between the bottom surface of the last lens and wafer, to enlarge the numerical aperture of system and will extend the 193nm lithography below 45nm node. The principle of immersion lithography is analyzed, several fundamental issues of immersion lithography are discussed, and development status of the immersion lithographic tools is described.
出处
《激光与光电子学进展》
CSCD
北大核心
2006年第8期13-20,共8页
Laser & Optoelectronics Progress
关键词
光刻
浸没式光刻
投影物镜
浸没液体
偏振光照明
气泡
lithography
immersion lithography
projection lens
immersion fluid
polarized illumination
bubbles
