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IGBT模型参数辨识及其有效性验证 被引量：1

The Parameters Identification and Validation for IGBT
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摘要 由于导通及开关损耗小以及易于使用等优点,IGBT在电力电子系统中得到越来越广泛的应用。在设计电路之前,需要精确的器件模型及模型参数对电路进行仿真。本文提出一种基于实验测量、仿真及优化算法的IGBT模型参数辨识方法。以BUP302为例,给出了静态参数及动态参数的结果。在参数辨识的基础上,文中还提出了模型参数有效性验证的方法,最后给出了有效性验证结果。 IGBT ￡Insulated Gate Bipolar Transistor is becoming more and more popular in many power applications, since it offers a good compromise between on-state loss, switching loss and easy of use. To develop circuits and systems using theses devices, model and model parameters are needed for use in circuit simulators. This paper presents a procedure for identifying the most important parameters to be used in IGBT models. As an example, the results of identified parameters of BUP302 arze given. Based on the identification, the paper presents the method for parameters validation. At last, the validation conclusion was given.
作者 高艳霞 郭水保
机构地区 上海大学
出处 《电力电子》 2006年第3期39-46,共8页 Power Electronics
基金 台达电力电子科教发展基金上海市教委发展基金资助
关键词 IGBT模型 参数辨识 有效性验证 IGBT model Parameters Identification Validation
分类号 TP311.1 [自动化与计算机技术—计算机软件与理论]
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参考文献8

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同被引文献12

  • 1梅军,郑建勇,胡敏强,饶莹,陈军,吴恒荣.Saber仿真模型IGBT1在固态开关设计中的应用[J].电力自动化设备,2005,25(6):53-57. 被引量：12
  • 2A.R.Hefner, D.M.Diebolt.An experimentally verified IG model implemented in the saber circuit simulator[J]. IEEE Transactions on Power Electronics, 1994, 9(5): 532-542.
  • 3J.Reichl,J-S.Lai,A.R.Hefner,etal.Inverter dynamic electro-thermal modeling and simulation with experimental verification [C]//IEEE 36th Power Electronics Specialists Conference,Jun. 16-16,2005, Recife,Brazil:Institute of Electrical and Electronics Engineers Inc., 2005,1: 2208-2215.
  • 4S. C. Yuan. IGBT spice - An experimentally verified model with parameters extraction by device nondestructive measurements [J]. IEEE circuits and devices magazine, 2006, 21(6): 21-27.
  • 5S. C. Yuan. Non-destructive parameters extraction for IGBT spice model and compared with measurements[J]. Solid-State Electronics, 2001, 45(12): 2069-2075.
  • 6L. Lu, A. Bryant, E. Santi, et al. Physics-Based Model of IGBT luding MOS Side Two-Dimensional Effects [C]//IEEE Industrial Application CUSA: Institute of Electrical and Electronics Engineers Inc., 2006:1457-1464.
  • 7Hyeong-Seok Oh, Mahmoud EI Nokali. A new IGBT behavioral model [J]. Solid-State Electronics, 2001, 45(12): 2069-2075.
  • 8Chia-Hsiung Kao, Chun-Chieh Tseng, Fong-Ming Lee, et al. A new equivalent circuit model of IGBT for simulation of current sensors [J].IEEE Transaction on power Electronics, 2005, 20(4): 725-731.
  • 9V. Agarwal. Modeling for IGBT[C]//IEEE International Conference on Industrial Technology, Dec. 15-17, 2006, Bhubaneswar, INDIA. CA, USA: IEEE COMPUTER SOC, 2006: 563-567.
  • 10E. Elwarraki, A. Sabir. Behavioural and Electrother BT of the IGBT for circuits simulation[C]//14th IEEE International Conference on Electronics, Circuits, and Systems, Dec. 11-14, 2007, Marrakech, Morocco: Institute of Electrical and Electronics Engineers Inc.,2007:90-93.

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电力电子
2006年 第3期

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