摘要
描述了一种热辅助磁盘存储技术,该技术可应用于未来的高密度磁盘存储.记录介质是一种CoNiPt多层膜,它可用作垂直模式的磁记录介质.使用扫描隧道显微镜(STM)产生的隧道电流作为热源对磁膜进行局部加热.隧道电流随着加在STM针尖与磁膜之间的脉冲电压幅值的增大而增大.实验结果显示了圆形记录点在磁膜上生成,记录点尺寸与电压值相关,阈值电压为4V左右.当电压高于阈值时,记录点尺寸随着电压的增大而增大,平均尺寸为170nm;当电压低于阈值时,未发现记录点.一个简单的模型解释了以上实验现象.
This paper demonstrates a technique on heat-assisted magnetic probe recording. The recording medium is a CoNi/Pt muhilayered film, suitable for perpendicular recording. Scanning tunneling microscopy(STM) current was introduced to heat the medium locally. Pulse voltages of 2-9 V, 500 ns in width and 100 ns in risetime were used to write marks. Marking was achieved at bias voltages higher than the threshold value 4 V in the shape of circular dots with an average size of 170 nm. Below the threshold, no marks were observed. A simple model qualitatively explains the experiment.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第8期4271-4275,共5页
Acta Physica Sinica
关键词
扫描隧道显微镜
热辅助磁盘存储技术
高密度磁盘存储
scanning tunneling microscopy, heat assisted magnetic recording, ultra-high density recording