摘要
结合声表面波和光致发光谱在低温(15K)下对非故意掺杂的GaAs(110)量子阱结构的发光特性进行了研究.实验结果表明,由于声表面波的作用GaAs(110)量子阱的发光强度减弱,并且其对应的重空穴能级出现了分裂的现象,当施加的声波强度Prf达到20dBm时,能级分裂ΔE达到了10meV.进一步讨论了声表面波对GaAs(110)量子阱圆偏振光自旋注入的影响.
We studied the low temperature （ 15 K） photoluminescence properties of un-doped GaAs（110） quantum wells modulated by surface acoustic waves （SAW） by photolumi （PL） spectroscopy technique. Under the influence of the SAW, the decreasing of PL intensity and the splitting of the PL lines were observed. The magnitude of the splitting can be up to 10 meV when the power applied to the transducers is 20 dBm. Furthermore, the spin injection in GaAs（110） quantum wells generated by circular polarization light under the influence of SAW was also discussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2006年第8期4327-4331,共5页
Acta Physica Sinica
关键词
发光
GAAS量子阱
声表面波
自旋极化
photoluminescence, GaAs quantum wells, surface acoustic waves, spin polarization
