表面预处理对HfO_2栅介质MOS器件漏电特性的影响

Effects of Surface Pretreatments on Leakage Properties of MOS Devices with HfO_2 as Gate Dielectrics

采用反应磁控溅射方法,在Si衬底上制备了不同表面预处理和不同后退火处理的HfO2栅介质MOS电容。测量了器件的C-V和I-V特性,并进行了高场应力实验。器件的界面特性和栅极漏电机理分析表明,界面态和氧化物陷阱是引起大的栅极漏电流的主要因素。采用新颖的O2+CHCl3(TCE)表面预处理工艺,可以显著降低界面态和氧化物陷阱密度,从而大大减小栅极漏电流和SILC效应。

Using reactive magnetron sputtering, HfO2 gate dielectric films with different pretreatments and annealing conditions were deposited on n-Si（100）substrates, Analysis of leakage current and SILC effects shows that the interface property was obviously improved by O2 ＋ CHCl3 （TCE）pretreatments, thus reducing gate leakage current and SILC effects.