期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种产生正负倍压的电荷泵的优化设计 被引量：1

Optimal Design of a Charge Pump with Doubled Positive and Negative Output Voltages
下载PDF
导出
摘要 通过对传统的电荷泵进行结构改进和参数优化,得到了一种高效率、低功耗的电荷泵,并阐述了电荷泵的工作原理,分析了影响功耗和效率的因素。该电荷泵通过检测输出电压来控制泵压,大大降低了功耗;同时,再对开关管进行参数优化,进一步减小了功耗。最后,将该优化后的电荷泵应用到RS-232C串口通信电路中。通过仿真,对其性能进行了验证,并与传统电荷泵进行了比较。 A high-efficiency, low-power charge pump was obtained by modifying the structure of a conventional charge pump and optimizing its parameters. The operational principle of the charge pump was described,and factors affecting power consumption and efficiency were analyzed. The pumping mode was controlled by detecting output voltages to cut down power consumption, which was further reduced by optimizing the size of switching transistors. The optimized charge pump was used in an RS-232C serial communication circuit. Its performance was verified through simulation and some characteristics were compared with the conventional type.
作者 尚晓丹 王继安 张佳 王娜 李威 龚敏
机构地区 四川大学微电子学系微电子技术四川省重点实验室 电子科技大学微电子与固体电子学院
出处 《微电子学》 CAS CSCD 北大核心 2006年第4期522-525,共4页 Microelectronics
关键词 电荷泵 RS-232C 串口通信电路 Charge pump RS-232C Serial communication circuit
分类号 TN431 [电子电信—微电子学与固体电子学]
  • 相关文献

参考文献6

  • 1Wu J-T,Chang K-L.MOS charge pumps for low-voltage operation[J].IEEE J Sol Sta Circ,1998,33(4):592-597.
  • 2Ying T R,Ki W H,Chan M.Area-efficient CMOS charge pumps for LCD drivers[J].IEEE J Sol Sta Circ,2003,38(10):1721-1725.
  • 3Pelliconi R.Power efficient charge pump in deep submicron standard CMOS technology[J].IEEE J Sol Sta Circ,2003,38(6):1068-1071.
  • 4Bingham D.Integrated dual charge pump power supply and RS-232 transmitter/receiver[P].US Patent 4999761,Mar.1991.
  • 5Favrat P,Deval P,Declercq M J.A high-efficiency CMOS voltage doubler[J].IEEE J Sol Sta Circ,1998,33(3):410-416.
  • 6Wang C C,Wu J C,Efficiency improvement in charge pump circuits[J].IEEE J Sol Sta Circ,1998,32 (6):852-860.

同被引文献7

  • 1KAWAHARA T, KOBAYASHI T, JYOUNO Y, et al. Bit-line clamped sensing multiplex and accurate high voltage generator for quarter-micron flash memories [J]. IEEE J Sol Sta Circ, 1996, 31. 1590-1600.
  • 2WU J-T, CHANG Y-H, CHANG K L. 1.2 V CMOS switch-capacitor circuits [C]//IEEE ISSCC Dig Tech Pap. San Francisco, CA, USA. 1996: 388-389, 479.
  • 3DICKSON J F. On-chip high voltage generation in MNOS integrated circuits using an improved voltage multiplier technique [J]. IEEE J Sol Sta Circ, 1976, 11(3) : 374-378.
  • 4PAN F, SAMADDAR T. Charge pump circuit design[M]. New York, USA: McGraw-Hill, 2006.
  • 5WU J-T, CHANG K-L. MOS charge pumps for low- voltage operation[J]. IEEE J Sol Sta Circ, 1998, 34 (4) : 592-597.
  • 6RAZAVI B. Design of analog CMOS integrated circuits [M ]. [ S. I. ]: McGraw-Hill Higher Education, 2001: 330-360.
  • 7CAMPARIO G, MICHELONI R, NOVOSEL D. VLSI-design of non-volatile memories [M]. New York, USA: Springer, 2005. 115-117.

引证文献1

二级引证文献3

微电子学
2006年 第4期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部