摘要
应用同步辐射X射线白光形貌术,对Nd∶GGG晶体中的缺陷进行了研究,观察到晶体中的主要缺陷是生长条纹和位错,对生长条纹产生的机理和位错的类型进行了分析讨论,生长条纹是由于温度波动引起生长率的起伏产生的,确定晶体中的位错有刃型位错、螺旋位错和混合位错。根据生长条纹和位错的生成机制,提出了一些改进生长工艺的措施和方法,为生长质量更高的晶体提供了参考。
The Nd : GGG crystal defects were studied by the synchrotron radiation white-beam topography. The growth stripe and dislocation as main defect in the crystal were observed. The form reason of the growth stripe is that the temperature waving lead to the growth velocity fluctuating. The dislocation sorts have blade type, spiral type and mixed type. According to the form principle of the growth stripe and dislocation, some methods were brought forward in order to decrease the crystal defects and improve the crystal quality.
出处
《功能材料》
EI
CAS
CSCD
北大核心
2006年第7期1033-1035,共3页
Journal of Functional Materials
基金
国家自然科学基金资助项目(50472104)
关键词
Nd:GGG晶体
同步辐射
生长条纹
位错
Nd : GGG crystal
synchrotron radiation
growth stripe
dislocation