衬底温度对ZnS薄膜微结构和应力的影响

Effect of substrate temperature on microstructure and stress of ZnS films

采用射频磁控溅射法分别在不同温度衬底上制备了厚度为320nm的ZnS薄膜，用XRD和光学相移技术研究了不同衬底温度下薄膜的微结构和应力。结果表明：不同温度衬底上沉积的ZnS薄膜均呈多晶状态，衬底温度由50℃上升到400℃的过程中，其择优取向发生了变化，晶粒有明显的生长方向；ZnS薄膜应力随着衬底温度升高逐渐减小，衬底温度在250～350℃之间的ZnS薄膜应力较小且在选区内分布比较均匀。

320nm-thiekness ZnS films are prepared on different substrate temperature by RF magnetron sputtering. The mierostrueture and stress distribution of the films with different substrate temperature were studied by X-ray diffraction and optical phase-shift technology. The results show that the polyerystalline ZnS films are consisted of fee ZnS nanopartieles. The ZnS particles gradually enlarge with the substrate temperature increasing from 50 to 400℃. The preferred orientation changes and the particles have apparent upspring orientation. The stress of ZnS films gradually releases with the substrate temperature increasing. It becomes smaller and better-distributed on the range of selected area as the substrate temperature increases from 250 to 350℃.