Li和Ti共掺NiO薄膜的溶胶-凝胶法制备及其介电性能

Sol-gel fabrication and dielectric properties of Li and Ti doped NiO thin films

采用溶胶-凝胶法在Pt／Ti／SiO2（1mm）／Si基板上制备了Li和Ti共掺NiO基新型无铅介电薄膜材料，研究了薄膜的形貌、结构、介电性能。结果表明。热分解温度（300～500℃）对薄膜结构影响不明显，经600-800℃退火后的薄膜由NiO与Li-Ni—O复合氧化饧组成；经300℃热分解处理、650℃退火后的薄膜，其表面均匀致密，膜厚约300nm，室温下100Hz时的介电常数为767，当频率高于3000Hz后，介电常数随频率的增加趋于减小。

Li-Ti-Ni-O dielectric thin films were successfully fabricated by sol-gel method on the SiO2 （1μm）/Si and Pt （350nm）/Ti （70nm）/SiO2 （1μm）/Si substrate. The morphology, microstructure as well as dielectric properties of Li-Ti-Ni-O thin films were investigated by optimizing the process condition including pyrolysis and annealing parameters. Li-Ti-Ni-O thin films consist of NiO and Li-Ni-O composite oxide when they were pyroly- sis treated at 300-500℃ and annealed at 600-700℃. The film was about 300nm in thickness without cracks. The dielectric constant of Li-Ti-Ni-O thin film was about 767 at 100Hz and began to decrease with increasing frequency at more than 3000Hz.