掺杂Co纳米β-Ni(OH)_2的制备及其循环伏安行为

Preparation of nano-scale β-Ni(OH)_2 doped Co and its cyclic voltammogram behavior

采用共沉积方法制备出掺杂Co的纳米β-Ni(OH)2,并对Co掺杂比例与材料性能的关系进行了研究。XRD、TEM测试结果表明,利用共沉积法可以制备出不同掺杂Co比例的纳米β-Ni(OH)2,随着Co掺杂比例的增大,材料的晶格缺陷明显增多,晶格参数和表面型貌也发生相应的变化。利用微电极的循环伏安(CV)行为研究表明,掺杂后材料的循环伏安性均较掺杂前有所改善,且Co的掺杂比例对材料的氧化峰电位(EP,a)、还原峰电位(EP,c)及质子扩散系数(D)均产生影响,当Co的掺杂比例为5%时,材料的质子扩散性能相对最好。

Nano-scale Ni（OH）2 doped Co was prepared by precipitate transformation method,and the effect of the percentage of doped Co on the performance of material was investigated. The measurement results of XRD and TEM indicate that nano-scale β-Ni（OH）2 doped different percentage of Co can be prepared by precipitate transformation method,with the increase of the percentage of doped Co,the crystal lattice defect increases obviously, lattice parameters and surface state have changed correspondingly also. The study of cyclic voltammetry （CV） behavior used a microelectrode shows that the CV performance of nano-scale Ni（OH）2 doped Co is enhanced, and the percentage of doped Co can exert a great influence on the peak potential （Ep,a and Ep,c） and proton diffusion coefficient（D）, the material doped 5% Co exhibits relative superior CV performance.