中间模板路线合成碳化硅纳米棒

An Intermediate Template Growth of Silicon Carbide Nanorods

采用中间模板路线在600～700℃相对低的温度下，用四氯乙烯和四氯化硅作为原材料，用溶剂热的方法合成了立方相的碳化硅（β-SiC）纳米棒．这种可选择性的路线为理解一维纳米材料的生长提供了实验上的依据，用X射线衍射，光电子能谱，拉曼光谱，透射电镜以及选区电子衍射对产物进行了表征．碳化硅纳米棒大约长800～1750nm，直径为50～60nm．

An intermediate template route was developed to grow cubic silicon carbide （β- SiC） nanorods at relatively low temperature of 600 ～ 700 ℃ using tetrachloroethylene （C2Cl4） and silicon tetrachloride （SiCl4） as carbon and silicon sources, respectively by a solvothermal method. The alternative method provided further understanding for the growth of the SiC nanorods. The product was characterized by X-ray powder diffraction （XRD）, X-ray photoelectron spectra （XPS）, Raman backscattering, transmission electron microscopy （TEM） and selected area electron diffraction （SAED）. And the SiC nanorods have the diameter of 50～60 nm and the length of up to 800 nm～1.75 μm.