VDMOSFET的终端优化设计

The Design of VDMOSFET Junction Temination Optimization

主要介绍了VDMOSFET的终端优化设计,讨论了已有终端结构中的场环、场板技术,工作原理.以一种新型的高频VDMOSFET与模拟栅相结合的结构为例,详细讨论了场板在减少反馈电容、提高器件的击穿电压、降低导通电组、改善跨导、提高输出电阻、改进安全工作区方面的理论机制及作用.

In this paper, the junction termination technology optimization of the vertical double - diffusion metal - oxide - semiconductor field effect transistor（VDMOSFET） is described. The operation principle of the field plate, the field limiting ring in the existed termination technology is analysed. And taking a novel high - frequence VDMOSFET structure with a dummy - gate for example, this paper discussing the theory and function of the field plate in lowering the feedback capacitance, raising the device breakdown voltage, lowering the on- state resistance, improving the transconductance, increasing the output resistance and improving the safe operating area（SOA）.