SEM在电子元器件破坏性物理分析中的应用

Application of SEM to Destructive Physical Analysis of Electronic Components

探讨了在电子元器件破坏性物理分析(DPA)中,如何利用扫描电子显微镜(SEM)的高分辨、景深深、放大倍数高和立体感强等一系列技术特点,对微电子器件的互连金属化层异常缺陷进行定位观察、成像和分析的技术。实践证明,SEM可以很好地解决光学显微镜无法解决的一些技术问题,可以提高DPA结果的准确性。

The advantages of Scanning Electron Microscope （SEM） in terms of resolution, depth of field, amplificatinn and three dimensional appeal were introduced. The application of SEM to the Destructive Physical analysis （DPA） of electronic components was discussed with emphasis on localized observation, imaging and analysis of interconnection metallization abnormal defects of microclectronic devices.