摘要
尝试采用真空分解V2O5熔体的方法制备高纯度的VO2,通过XRD和SEM等方法进行了分析.结果表明,该方法可以直接获得高纯度的VO2的沉积层,沉积层为连续单相多晶组织.当熔体以小于10℃/h的升温速率加热到1350℃,真空度控制为10^-6atm,所获得的沉积层的电阻突变量级达到最大为4～5,相变温度为68℃,相变温度滞后为1℃～2℃.
The vacuum decomposition was analyzed. By using XRD and SEM the analysis shows that a continuous VO2 single phase layer can be prepared by the decomposition. When the VO2 was heated at a rate less than 10 ℃/h to the temperature of 1350 ℃ and its vacuum pressure kept at 10^-6arm, the electrical resistance of VO2 layer mutate significantly up to 4 - 5 orders of magnitude, at the temperature of 68 ℃, the hysterisis of which is 1℃- 2 ℃.
出处
《机械科学与技术》
CSCD
北大核心
2006年第7期806-808,共3页
Mechanical Science and Technology for Aerospace Engineering
