Ga^(3+)掺杂对纳米氧化锌粉体导电性能的影响

Effect of Ga^(3+) Doping on the Electrical Conductivity of Nano-Sized Zinc Oxide Powders

采用液相共沉淀方法,以ZnSO4·7H2O为原料,GaCl3为掺杂化合物,NH4HCO3为沉淀剂合成碱式碳酸锌前驱体,通过在H2气氛下煅烧,制得Ga3+均匀掺杂的纳米氧化锌导电粉体。利用SEM,TEM,XRD,XPS和BET等分析手段对粉体的性能进行表征。结果表明,这种方法合成的导电氧化锌粉体材料颗粒尺寸较小、粒度分布均匀(约在20nm^40nm的范围内),颗粒呈类球状形貌,具有较好的分散性能。研究了Ga3+掺杂对氧化锌粉体导电性能的影响。结果表明,在Ga3+掺杂量为2.2mol%时,制得的氧化锌粉体的导电性能最好,体积电阻率达到2.0?·cm。

Highly electro-conductive nano-sized zinc oxide powders were prepared by calcining the precursor synthesized from ZnSO4·TH2O, GaCl3 and NH4HCO3 by the co-precipitation method. The obtained zinc oxide powders were characterized by SEM, TEM, XRD, XPS and BET techniques, and the influence of Ga^3＋ doping on the electrical conductivity of zinc oxide was investigated. It was found that the volume resistivity of the zinc oxide decreases to 2.0 Ω·cm when the Ga^3＋ doping content is 2.2 mol%, much lower than the conventional zinc oxide powders. This material can be effectively used as electro-conductive fillers in ceramics, fibers, dopes, rubbers and other fields.