摘要
利用热生长工艺和热蒸发方法分别获得CuPc和Si O2薄膜层,通过原子力显微镜和X射线光电子能谱对其表面界面电子状态进行了研究,并采用高斯拟合方法对各谱进行了详细分析.结果表明,在氧原子的作用下,N1s ,C1s ,O1s和Cu2p都经受了一定的化学位移,从而使得各原子间的相互作用强度有所改变,这是导致OFET性能劣化的重要原因之一.对OFET而言,采用溅射工艺制备的Si O2层应比热氧化生长的Si O2层更合适.
A CuPc/SiO2 sample is fabricated. Its morphology is characterized by atomic force microscopy, and the electron states are investigated by X-ray photoelectron spectroscopy. In order to investigate these spectra in detail, all of these spectra are normalized to the height of the most intense peak,and each component is fitted with a single Gaussian function. Analysis shows that the O element has great bearing on the electron states and that SiO2 layers produced by spurting technology are better than those produced by oxidation technology.
