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A Low Noise,1.25Gb/s Front-End Amplifier for Optical Receivers

低噪声1·25Gb/s光接收机前端放大器(英文)
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摘要 This paper presents a low noise, 1.25Gb/s and 124dBΩ front-end amplifier that is designed and fabricated in 0.25μm CMOS technology for optical communication applications. Active inductor shunt peaking technology and noise optimization are used in the design of a trans-impedance amplifier,which overcomes the problem of inadequate bandwidth caused by the large parasitical capacitor of the CMOS photodiode. Experimental results indicate that with a parasitical capacitance of 2pF,this circuit works at 1.25Gb/s. A clear eye diagram is obtained with an input optical signal of - 17dBm. With a power supply of 3.3V, the front-end amplifier consumes 122mW and provides a 660mV differential output. 设计并实现了一种基于TSMC 0·25μm CMOS工艺的低噪声、1·25Gb/s和124dBΩ的光接收机前端放大器.跨阻放大器设计采用了有源电感并联峰化和噪声优化技术,克服了CMOS光检测器大寄生电容造成的带宽不够的问题.测试结果表明,在2pF的寄生电容下,前端放大器工作速率达到了1·25Gb/s ,在光功率为-17dBm的光信号输入下得到了清晰的眼图.芯片采用3·3V电压供电,功耗为122mW,差分输出电压幅度为660mV.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2006年第8期1373-1377,共5页 半导体学报(英文版)
基金 国家高技术研究发展计划资助项目(批准号:2002AA312240)~~
关键词 front-end amplifier T1A shunt peaking active inductor 前端放大器 跨阻放大器 并联峰化 有源电感
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参考文献4

  • 1Razavi B.Design of analog CMOS integrated circuits.McGraw-Hill,2001
  • 2Hu Yan,Wang Zhigong,Feng Jun.5Gb/s 0.25μm COMS limiting amplifier.Chinese Journal of Semiconductors,2003,24(12):1250
  • 3Lee T H.The design of CMOS radio-frequency integrated circuits.Beijing:Publishing House of Electronics Industry,2002:146
  • 4Sackinger E,Fischer W C.A 3-GHz 32-dB CMOS limiting amplifier for SONET OC-48 receivers.IEEE J Solid-State Circuits,2000,35(12):1884

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