摘要
提出具有p埋层的1200V多区双RESURF(MRD-RESURF)LDMOS,在单RESURF(S-RESURF)结构的n漂移区表面引入多个p掺杂区,并在源区下引入p埋层,二者的附加场调制器件原来的场,以改善其场分布;同时由于电荷补偿,提高了漂移区n型杂质的浓度,降低了导通电阻.开发1200V高压BCD(BJT,CMOS,DMOS)兼容工艺,在标准CMOS工艺的基础上增加pn结对通隔离,用于形成DMOS器件D-RESURF的p-top注入两步工序,实现了BJT,CMOS与高压DMOS器件的单片集成.应用此工艺研制出一种BCD单片集成的功率半桥驱动电路,其中LDMOS,nMOS,pMOS,npn的耐压分别为1210,43·8,-27和76V.结果表明,此兼容工艺适用于高压领域的电路设计中.
A 1200V multi-region double RESURF LDMOS with a p-type buried layer,which has multiple p regions in the n- drift layer of a single RESURF structure is proposed for improving the surface electric field,increasing the concentration of the n-drift layer,and reducing the on-resistance of LDMOS. A 1200V BCD technology based on standard CMOS technology is realized by adding pn isolation and p-top implantation. Using this technology we develop a power half bridge driver. The breakdown voltages of the LDMOS,nMOS, and pMOS are 1210,43.8, and - 27V,respectively, the BVceo of the npn is 76V in the driver. The 1200V BCD technology thus can be used in the design of HVIC.
基金
国家自然科学基金(批准号:60436030)
国家"十五"军事电子预研(批准号:41308020210)资助项目~~
