摘要
从载流子输运机制的角度,分析了影响GaN基激光器中有源区电流溢出的因素,对AlGaN电子阻挡层中Al组分和p型掺杂水平进行了优化.结果表明,当p型掺杂水平增高时,所需要的势垒高度减小,即Al组分减小.
In view of the transport mechanism of electrical carriers, the factors involved in the current overflow in GaN-based laser diodes are analyzed,and the aluminum mole fraction as well as the p-doping concentration of the AlGaN electron blocking layer are optimized. The results indicate that the appropriate barrier height (the Al mole fraction) is lower when the p- doping concentration is higher.
基金
国家自然科学基金(批准号:60477011
60476028
60406007
60276010)
国家高技术研究发展计划(批准号2001AA313110
2001AA313060
2001AA313140
2005AA31G020)资助项目~~