GaN基激光器电子阻挡层的优化分析

Optimization of the Electron Blocking Layer in GaN Laser Diodes

从载流子输运机制的角度,分析了影响GaN基激光器中有源区电流溢出的因素,对AlGaN电子阻挡层中Al组分和p型掺杂水平进行了优化.结果表明,当p型掺杂水平增高时,所需要的势垒高度减小,即Al组分减小.

In view of the transport mechanism of electrical carriers, the factors involved in the current overflow in GaN-based laser diodes are analyzed,and the aluminum mole fraction as well as the p-doping concentration of the AlGaN electron blocking layer are optimized. The results indicate that the appropriate barrier height （the Al mole fraction） is lower when the p- doping concentration is higher.