氮离子束注入谷子种子后代基因组的RAPD分析

GENOME RAPD ANALYSIS OF MILLET MUTANTS BY N^+ ION IMPLANTATION

本试验应用RAPD标记技术对氮离子注入和γ射线辐射谷子种子引起的后代个体基因组DNA变异进行检测并作比较。145份材料在经筛选后的10个具多态性的随机引物上扩增得到94个多态性位点,145份材料之间的平均遗传距离为0.1978。结果表明低能氮离子注入谷子种子可以引起体内基因组DNA发生突变,经氮离子束注入的后代遗传差异大于γ射线处理引起的后代遗传差异。其中剂量为2.5×1016N+/cm2的氮离子束处理引起的后代遗传差异最大,平均遗传距离为0.1920,表明离子束注入应用于谷子诱变育种可以引起较丰富的遗传变异,是一种有效的生物品种改良新技术。

A study of the genomic variation of millet offspring from treatment of implanting N^＋ ions and ^60 Co γ-rays by using RAPD analysis was carried out. 94 polymorphic DNA fragments were amplified from 10 selected random oligonucleotide primers in 145 mutants. The results showed that genetic distances （GD） among the 145 mutants are ranged from 0.1 to 0.5 with a raean of 0.1978. The results suggested that N^＋ ions implantation could induce genomic variation, which was more effective than that of ^60 Co γ-rays. The ion beam of 2.5×10^10N^＋/cm^2 made a great genetic variation, its mean genetic distance was 0.1920. Ion implantation is an useful technique for plant breeding.