a-SiC_x:Hp-i结的电致发光

Electroluminescence of a-SiC_x p-i Junction

在以ITO薄膜为正极的透明导电玻璃上,利用PECVD方法进行B掺杂制备出具有p-i结的a-SiCx:H薄膜,然后在其上溅Al作为负电极形成“三明治”器件结构,并对它的I-V特性和发光特性进行了研究。结果表明,器件具有整流效应,正反向电压分别为8 V和12 V;在正向电压高于8 V时,观测到了电致发光。最后,根据我们提出的能带模型很好地解释了实验结果。

a-SiCx film with B-doped p-i junction structure was deposited by plasma enhanced chemical vapor deposition （PECVD） on ITO transparent conductive glass with the film as an anode, then an Al film, as a cathode, was sputtered, which consisted of a sandwich structure, and its I-V and light emitting characteristics were studied. The results show that the device is of diode characteristics with its forward bias and reverse bias of 8 V and 12V, respectively. When forward bias is higher than 8 V, the electroluminescence of the device is observed. The experimental results are explained well with the energy band model we propose.