用于室温红外探测器热敏材料的PECVD掺硼a-Si薄膜的研究

Study on B-doped a-Si Film Deposited by Plasma Enhanced Chemical Vapor Deposition as Thermal Sensitive Material for Uncooled Infrared Detector

采用PECVD法制备用于室温红外探测器中热敏感材料的掺硼a-Si薄膜。通过系统地研究气体流量、射频功率与衬底温度等制备工艺条件与薄膜的电导率、含氢量和电阻温度特性的相关性,得到了最佳的工艺条件,并利用其制备出了探测灵敏度高达2.17×108cmHz1/2W-1的a-Si室温红外探测器。

B-doped a-Si films for thermal-sensitive materials in uncooled infrared detectors were deposited by plasma enhanced chemical vapor deposition （PECVD）. Dependence of electrical conductivity, hydrogen-contained amount and temperature coefficient of resistance of the films on deposited parameters such as gas flow, RF power and substrate temperature, were systemically studied, and therefore the optimal process parameters were obtained. Using this film as thermal-sensitive material, we developed an uncooled infrared detector with a detectivity of 2.17×10^8 cmHz^1/2W^-1.