硅纳米线阵列的制备及其光伏应用

FABRICATION OF SILICON NANOWIRE(SiNW) ARRAYS AND APPLICATION IN SOLAR CELL

采用金属催化化学腐蚀方法在单晶硅片表面可以制备出大面积排列整齐、与原始硅片取向一致的硅纳米线阵列,得到的硅纳米线单晶性好、轴向可控且掺杂浓度不受掺杂类型和晶向的影响。基于此,我们成功制备了大面积硅纳米线p-n结二极管阵列。此外,硅纳米线阵列结构具有优异的减反射性能,探索了其在太阳电池中的应用。目前初步研制出了基于硅纳米线阵列的新型太阳电池,获得了最高为9.23%电池效率。同时也研究了限制硅纳米线阵列太阳电池转换效率的主要因素,为以后的应用做了前期的探索工作。

Large-area aligned high quality mono-crystalline silicon nanowire （SiNW） arrays with identical orientation of silicon wafers were successfully prepared on mono-crystalline Si wafers using a novel metal-catalyzed chemical etching technique. The SiNWs possess desirable axial orientation and controllable doping characteristics. Based on this method, large-area SiNW p-n junction diode arrays also were successfully prepared. Optical reflection measurements show that the obtained SiNW arrays could drastically suppress the optical reflection over a wide spectral bandwidth. Because of the remarkable optical antireflection performance, a prototype SiNW-based cell with a conversion efficiency of 9.23% was achieved. Main factors affecting the improvement of conversion efficiency also were studied, which will pave the way for the following work.