射频磁控溅射SiO_2薄膜的制备与性能研究

Fabrication and Properties of Silicon Dioxide Film Prepared by RF Magnetron Sputtering

采用磁控射频反应溅射法在单晶硅片上制备了二氧化硅薄膜。研究了制备工艺对薄膜沉积速率、表面形貌、折射率和电击穿场强的影响。结果表明:薄膜的沉积速率随氧分压的增加先急剧减小,稍有增加后再缓慢减小,而随溅射功率的增加几乎呈线性增长;薄膜表面均匀,平均粗糙度分别为1.740 nm(100 W)和2.914 nm(300 W),有随溅射功率的增加而增加的趋势;薄膜的折射率随着溅射气氛中氧气含量的增加而增加,最后稳定于1.46不变;薄膜的电击穿场强随溅射功率的增加先缓慢增加,然后缓慢减小,通过800℃/100 s的快速热处理,薄膜的电击穿场强明显升高。

Silicon dioxide thin films were prepared by reactive RF magnetron sputtering on silicon substrate. The deposition rate, morphologies, breakdown voltage and refractive index were studied. The results showed that the deposition rate decreased rapidly with the oxygen partial pressure at first and then increased to some extent where it begins decreased again. Furthermore the deposition rate had a linear relationship with the sputtering power; The film surface was uniform, the roughness was small and increased when sputtering power increased; The refractive index increased with the oxygen partial pressure, then kept stable at 1.46; The breakdown voltage rose slowly with the increasing of sputtering power, then decreased, the breakdown voltage increased after 800℃//100 s rapid thermal annealing,