摘要
用改进的布里奇曼法在两温区立式炉中生长出20×55mm硒镓银单晶体.晶体外观无裂纹,完整性好.将晶体沿(101)面解理,加工制成10mm×10mm×9mm测试样品,在红外显微镜下观察,晶体内部均匀,包裹体及其它缺陷较少.晶体红外透射率在10.6μm附近达62%.吸收系数为0.05cm-1.并对晶体热蚀坑和腐蚀条纹进行了扫描电镜观察.
A Perfect,orack-free single crystal of AgGaSe2 of 20mm in diameterand 55mm in length is grown by a modified Bridgman-Stockbarger techniqu e inthe two-zone vertical furnace. A sample of sibs of 10min× 10mm× 9mm is outalong the (101) cleavage plane. It is found by the IR microscope that there arefew inclusions and defects in the crystal. The transmission 18 62% and theabsorption coefficient is 0.05 cm-1 at 10.6 μm, respectively. The thermal etch pitsand corrosion stripes are observed by the Scanning Electron Microscope.
出处
《应用科学学报》
CAS
CSCD
1996年第4期437-440,共4页
Journal of Applied Sciences
关键词
红外光学材料
AgGaSe晶体
生长
化合物半导体
infrared nonlinear optics, silver selenogallate Single crystal, crystal growth, characterization study