10，6μmGe－Ag－Ni空心波导射频溅射镀膜的一种新方法

A NOVEL METHOD OF RF SPUTTERING FOR FABRICATION OF 10.6μm Ge-Ag-Ni HOLLOW WAVEGUIDE

该文提出一种射频溅射镀膜的新方法，讨论了该方法对小孔径１０．６μｍＧｅ－Ａｇ－Ｎｉ空心波导制作的意义，利用该方法已制成样品，同时给出并比较了几个不同孔径样品的光透射率．

A novel method of RF sputtering is discribed. The usefulness forthe fabrication of the 10.6μm Ge-Ag-Ni hollow waveguide with a small diameterof the method is discussed. Some samples have been fabricated using the method andthe transmittance of the samples with different waveguide diameters is presented.