SOI上PZT铁电薄膜的脉冲准分子激光沉积及其快速退火研究

Investigation of Pulsed Laser Deposition and Rapid Thermal Annealing of Ferroelectric Ph(Zr,Ti)O_3 Thin Films on Si-on-Insulator

用ＡｒＦ脉冲准分子激光在ＳＯＩ和Ｐｔ／ＳＯＩ衬底上沉积了Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３铁电薄膜，并用快速退火进行热处理．Ｘ射线衍射、卢瑟辐背散射等分析表明：所结晶的薄膜是以（１００）和（１１０）为主要取向的多晶膜，且结晶情况与热处理温度和时间密切相关；ＰＺＴ薄膜呈现良好的铁电性．

Abstract Ferroelectric Ph (Zr,Ti)O3 thin films were prepared by pulsed excimer laser deposition on SOI (Si-on-Insulator) and Pt-coated SOI substrates, rapid thermal annealing was performed to crystallize the thin films. Based on the analysis by X-ray diffraction,Rutherford backscattering spectroscopy and electric properties measurements, the films are of polycrystalline perovskite structure with mainly (100) and (110) orientations, have high resistivity and dielectric constant and their crystallization depends on the annealing time and annealing temperature.