微氮硅单晶中新施主的形成特性

Formation Characteristic of New Donor in N-Doped Silicon

借助于电学测量和低温（８Ｋ）红外分析技术，研究了微氮硅单晶中新施主的形成特性在６５０℃长时间热处理后，微氮硅单晶不产生新施主，其中氮破坏了新施主的可能形核中心低温４５０℃预退火能促进新施主生成，而高温１０５０℃预退火样品则同样没有新施主生成．

Abstract New donors of N-doped silicon are suppressed during annealing at 650℃ for a long time.It is found that the preannealing at 450℃ can promote the formation of new donors, but the preannealing at 1050℃ does not affect the formation of new donors. It is believed that nitrogen atoms attract oxygen atoms to destroy the possible nuclei of new donors and suppress the formation of new donors in N-doped silicon.