摘要
本文研究了Ｐｔ／ｎ－ＩｎＰ肖特基二极管在氢、氧气氛下的Ｉ－Ｖ、Ｃ－Ｖ以及复阻抗谱特性．测试结果表明：在氢气氛下势垒高度降低，在氧气氛下势垒高度增加，对二者均有良好的敏感特性．
Abstract Gas sensityvity of Pt/InP Schoottky barrier diode is researched by current-voltage,capacitance-voltage and complex impedance under different gas phase compositions.The results show that the barrier height decreases when the device is exposed to a hydrogen-containing nitrogen,and the barrier height increases to a oxeygen-containing nitrogen.Pt/InP Shottky barrier diode has good sensitivity to hydrogen and oxygen.
