半导体激光器热弛豫时间测试技术研究

Measurement of Thermal Relaxation Time of Semiconductor Lasers

利用脉冲工作状态下半导体激光器激射光谱随结温升高发生红移的原理,用Boxcar扫描在一定波长下的半导体激光器光功率随脉冲时间的变化信号,测得其时间分辨光谱;根据对应的峰值光功率出现时刻随波长变化的曲线,计算得到热弛豫时间参量值.利用此方法对一种半导体激光器进行了测试,得到其热弛豫时间为1.2ms.

Based on the theory of lasing wavelength red shifting of semiconductor laser due to junction temperature rising in pulsed operation, the time-resolved spectrum was measured by means of scanning optical power during the pulse at different wavelengths with a Boxcar. The thermal relaxation time was calculated by the measured relation of peak moment of optical signal within the pulse varied with wavelength. A pulse semiconductor laser was measured,and the thermal relaxation time was obtained to be 1.2 ms.