摘要
本文讨论了用ＭＩＱ－１５６四极ＳＩＭＳ仪器对ＡｌｘＧａ（ｌ－ｘ）Ａｓ中Ｓｉ进行定量分析的实验方法，考察了测量结果的重复性及ｘ变化时ＳｉＲＳＦ的变化规律，在ＩＭＳ－４ｆＳＩＭＳ仪器上进行了对比测试，用Ｃｓ＋源对（２９）Ｓｉ的原子检测限达到４×１０（１５）ｃｍ（－３）．
Abstract Experimental methods in quantitative analysis of St in AlxGa(1-x)As using MIQ156 quadrupole-based SIMS instrument have been discussed. Reproducibility of the experimental results and the dependence of RSF for Si upon x have been studied. Comparisons between the results obtained from MIQ-156 and IMS-4f SIMS instruments have been made. The detection limit of 4×1015cm(-3) for 29Si atoms has been obtained by using Cs+primary ion beam on MIQ-156.PACC: 0775, 7920N
基金
国家自然科学基金
关键词
SIMS
ALGAAS
硅
掺杂
Doping (additives)
Microwave devices
Photoelectric devices
Secondary ion mass spectrometry
Semiconducting aluminum compounds
Trace analysis
