摘要
在完成硅平面晶体管管芯和上部电极制备后，用低能量氩离子束进行背面轰击，能显著增大高频和超高频小功率晶体管的电流放大系数，提高特征频率、功率增益和输入阻抗，减小噪声系数和使击穿特性变硬，而势垒电容和薄层电阻不改变．实验结果和理论分析表明，上述参数的改善与轰击后界面态密度的减小、少数载流子寿命和扩散系数的增大有关．
Abstract The low energy argon ion beam has been used to bombard directly the backside of bipolar junction transistors at room temperature, and the characteristics of the transistors can be effectively improved. After the bombardment of transistor, the current gain,characteristic frequency, power gain and input impedance increase obviously, the noise factor decreases, and the electrical breakdown characteristics are improved. The effects are relevant to the bombardent time and beam current density. The results and analys is s0how that the improvement of transistor characteristics is relevant to the decreasing of in terface state density at Si-SiO2 interface, and the increasing of minority carrier lifetime and diffusion constant.PACC: 7850, 8160, 7300
