摘要
在显示器件薄膜晶体管(thinfilmtransistor,TFT)以及半导体制造工艺过程中,各个环节都有可能产生静电放电(electrostaticdischarge,ESD)现象,引起器件性能下降,甚至破坏器件。本文结合生产工艺的实际情况,采用统计方法首先对某工艺环节的ESD现象进行定位,在此基础上结合聚焦离子束(focusionbond,FIB)等试验结果,对其机理进行认真的分析研究,从设计和工艺改善两个方面出发,提出解决方案,收到了良好的改善效果,取得巨大的经济效益。
In the TFT-LCD array process and semi-conductor process, ESD phenomena usually happens among every process step, which makes bad effect to the display pixel unit or even destroys it. This paper gives a way to avoid such a ESD defect in the practice production, through equipment adjustment and design change. And all is based on deep mechanism analysis, quick statistic analysis and FIB,etc. experiments. A great economic losing is saved.
出处
《现代显示》
2006年第9期24-26,共3页
Advanced Display