工艺对磁控溅射ZAO薄膜光电特性的影响

Influence of Technological Parameters on Optoelectronic Properties of ZAO Films Deposited by DC Magnetron Sputtering Method

在玻璃衬底上用直流磁控溅射的方法镀制ZAO透明导电膜,研究了温度、氧压比、溅射气压、溅射速率等工艺条件对ZAO膜电阻率和可见光透过率等光电特性的影响。实验结果表明,当温度470℃、氧氩比0.5/40、溅射气压0.5Pa和镀膜速率3.6nm/min左右时,可获得薄膜电阻率7.2×10–4?·cm、可见光透过率85%以上的最佳光电特性参数。

ZAO transparent conductive films were deposited onto the glass substrates by DC magnetron sputtering method. The influences of technological parameters on optoelectronic properties of ZAO films were researched. These parameters consist of the temperature, the pressure ratio O2/Ar, the sputtering pressure and the sputtering speed. The experimental results show that the perfect electrical and optical parameters of the thin films with resistivity 7.2× 10^-4 Ω ·cm and visible light transmissivity beyond 85 % were obtained when the temperature 470 ℃, the pressure O2/Ar ratio 0.5 / 40, the sputtering pressure about 0.5 Pa and the sputtering speed about 3.6 nm/min.