Yb_(0.14)0Gd_(0.813)La_(0.047)VO_4晶体的生长、光谱和激光损伤阈值

Crystal Growth,Spectral Properties and Laser Damage Threshold of Yb_(0.140)Gd_(0.813)La_(0.047)VO_4 Crystal

采用Czochralsk i方法生长出了Yb0.140Gd0.813La0.047VO4晶体,并测试了Yb3+与La3+在GdVO4晶体中的有效分凝系数。实验结果表明,掺入La3+可在一定程度上提高晶体的激光损伤阈值和晶体生长过程中的稳定性。此外,La3+的引入还有利于减缓高浓度Yb3+掺杂晶体中的荧光捕获效应和浓度猝灭效应的激光损伤阈值。Yb3+在该晶体中具有很宽的吸收半峰宽和荧光半峰宽,分别为26nm和47nm,具有较大的吸收截面和发射截面,分别为2.26×10-20cm2和0.96×10-20cm2,因此该晶体有望用作可调谐激光晶体和飞秒激光晶体。

Yb0.140Gd0.813La0.047VO4 crystal was grown by the Czochralski method. The effective segregation coefficients of Yb^3＋ and La^3＋ ions in crystal are 0.80 and 0.47, respectively. The doping ion of La^3＋ can improve the laser damage threshold and the stability of crystal-growth process of Yb：GdVO4 crystal, weaken the fluorescence quenching and the fluorescence trapping effects of high Yb^3＋ -doped crystals. The crystal has large the full widths at half maximum （ FWHM ） of the absorption and fluorescence spectra, which is 26nm and 47nm, respectively, and the large absorption cross section and emission cross section that is 2.26×10^20cm^2 and 0.96×10^-20cm^2, respectively. So Yb0.140Gd0.813La0.047VO4 crystal may be applicable for femtosecond laser and for the tunable laser.