期刊文献+

氧化锌压敏陶瓷的制备与表征 被引量:1

Preparation and Characterization of the ZnO Varistor
下载PDF
导出
摘要 简析纳米氧化锌压敏陶瓷材料的概念、特性、表征、应用现状,以及制备纳米氧化锌的常见方法和工艺流程,并探讨了纳米氧化锌压敏陶瓷的结构、电参数和导电机理. This paper introduces a usual method and the work flow of preparing nano-sized ZnO,analyzes the concept, characteristics, development and present application of nano-sized ZnO varistor, and studies its structure,electricity parameter and conductive mechanism.
作者 俞平胜
出处 《株洲师范高等专科学校学报》 2006年第5期43-44,47,共3页 Journal of Zhuzhou Teachers College
关键词 纳米ZNO 压敏陶瓷 制备 表征 nano-sized ZnO varistor preparation characterization
  • 相关文献

参考文献1

  • 1马如璋 蒋民华 徐祖雄.功能材料学[M].北京:冶金工业出版社,1999..

共引文献2

同被引文献11

  • 1刘桂香,徐光亮,马建军,罗庆平.高压氧化锌压敏陶瓷粉体的制备现状及研究进展[J].中国非金属矿工业导刊,2005(2):8-11. 被引量:6
  • 2尹邦跃,梁雪元,梁启东.模拟MOX燃料粉末混合均匀性研究[J].原子能科学技术,2005,39(B07):125-130. 被引量:9
  • 3王钦忠,汪正浩.CuI半导体膜的电化学制备与性质[J].应用化学,2006,23(10):1161-1165. 被引量:1
  • 4SHI Jianzhang, CAO Quanxi, WEI Yunge, et al. ZnO varistor manufactured by composite nano-additives[J]. Materials Science and Engineering B, 2003,99: 344-347.
  • 5CAI Jingnan, LIN Yuanhua, LIMing, et al. Sintering temperature dependence of grain boundary resistivity in a rare-earth-doped ZnO varistor[J]. Am Ceram Soc, 2007, 90( 1 ) : 291-294.
  • 6ORLANDI M O, BUENO P R, LONGO E. Influence of thermal annealing treatment in oxygen atmosphere on grain boundary chemistry and non-ohmic properties of SnO2 · MnO polycrystalline semiconductors [J].Phys Stat Sol A, 2008, 205 (2) : 383- 388.
  • 7GONZA A LEZ J A, LO A PEZ V, BAUTISTA A, et al. Characterization of porous aluminium oxide films from AC impedance measurements [J]. Applied Electrochemsstry, 1999, 29: 229-238.
  • 8ADRIAN W Bott. Electrochemistry of semiconductors [J]. Current Separations, 1998, 17(3): 87-91.
  • 9T AKEHANA Makikazu, NISHINO Tomomichi, SUGAWAR A Katsuyasu, et al. Additives distribution and electrical properties in zinc oxide varistor prepared by a wet chemical method[J]. Chem Eng, 1996, 13 (5): 538-543.
  • 10HIROSE Sakyo, NISHITA Koichi, NIIMI Hideaki. Influence of distribution of additives on electrical potential barrier at grain boundaries in ZnO-based multilayered chip varistor[J]. Applied Physics, 2006, 100 : 0837061-0837067.

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部