摘要
在HgCdT e光伏探测器件S iO2+ZnS复合介质膜钝化中,引入O+2清洗和A+r刻蚀两种等离子体处理工艺,大大提高薄膜附着力,成功制备出优良的光伏器件。对处理前后的样品进行场发射扫描电子显微镜扫描、原子力显微镜扫描和二次离子质谱测试后发现,O+2清洗对去除样品表面的残余光刻胶效果显著;而A r+刻蚀使ZnS表面更为粗糙,增加了成核中心,使S iO2和ZnS表面互相渗透,增强了两层介质膜的附着力。
SiO2＋ZnS multi-layer film is often used for HgCdTe photovoltaic detector. But this kind of passivation is likely to have adhesion problem. By the introduction of O2^＋ cleaning and Ar^＋ etching into the preparation, the adhesion problem can be solved. It is clearly showed that most of residual photoresist can be removed after O2^＋ cleaning. It is also indicated that Ar^＋ etching process is helpful for ZnS surface coarsening and nucleation to form the mixing interface between SiO2 and ZnS films and thus improve the adhesion of these two dielectric films.
出处
《光学仪器》
2006年第4期56-59,共4页
Optical Instruments
